Capacity1TB
Form FactorM.2 2280
InterfacePCIe Gen 4.0 x4 with NVMe 1.4
ControllerPhison
NAND Flash3D NAND Flash
TBW (Total Bytes Written)320 TBW
Sequential Read Speed5,000 MB/s
Sequential Write Speed4,400 MB/s
Random Read 4KB750,000 IOPS
Random Write 4KB750,000 IOPS
Random Read (QD1)N/A
Random Write (QD1)N/A
Random Read (QD32)N/A
Random Write (QD32)N/A
TRIM SupportYes
Active Read3.3V (Active)
Active Write3.3V (Active)
IdleN/A
Operating Temperature0°C ~ 70°C
Storage Temperature-40°C ~ 85°C
Vibration Operating20G (80Hz~2,000Hz)
Vibration Non-Operating20G (80Hz~2,000Hz)
Shock Resistance1,500G/0.5ms
Dimensions80.0(L) x 22.0(W) x 3.7(H) mm
Weight7g