Sequential Read SpeedUp to 3,500 MB/s
Sequential Write SpeedUp to 3,300 MB/s
Random Read (QD32)Up to 600,000 IOPS
Random Write (QD32)Up to 550,000 IOPS
TBW (Terabytes Written)600 TBW
Capacity1TB
Form FactorM.2 2280
NAND Flash MemorySamsung V-NAND 3-bit MLC (TLC)
ControllerSamsung Phoenix Controller
InterfaceNVMe PCIe Gen 3.0 x4
Average Power Consumption (Active)5.5 W
Power Consumption (Idle)30 mW
MTBF (Mean Time Between Failures)1.5 Million Hours
Operating Temperature0°C to 70°C
Non-Operating Temperature-40°C to 85°C
Shock Resistance1500 G & 0.5 ms (Half sine)
Vibration Resistance20Hz~2000Hz, 20G